Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Texas Instruments |
Case |
TO66P |
Vbr CBO |
50 |
Vbr CEO |
40 |
Max. PD (W) |
80 |
t(f) Max. (S) |
400n |
Max. hFE |
150 |
Min hFE |
20 |
Ic Max. (A) |
15 |
@Ic (test) (A) |
5.0 |
Icbo Max. @Vcb Max. (A) |
50u |
Polarity |
NPN |
Tr Max. (s) |
350n |
R(sat) (Û) |
260m |
Derate Above 25°C |
640m |
Trans. Freq (Hz) Min. |
5.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
32 W |
Maximum Collector-Base Voltage |Vcb| |
50 V |
Maximum Collector-Emitter Voltage |Vce| |
40 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
318343 |