Weight |
0.01 kg
|
Case |
TO92 |
Type |
Transistor Silicon Pre-Biased-NPN |
Manufacturer |
Toshiba |
Polarity |
Pre-Biased-NPN |
Maximum Collector Power Dissipation (Pc) |
0.3 W |
Maximum Collector-Base Voltage |Vcb| |
50 V |
Maximum Collector-Emitter Voltage |Vce| |
50 V |
Maximum Emitter-Base Voltage |Veb| |
10 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
6 pF |
Transition Frequency (ft): |
250 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
Built in Bias Resistor R1 |
4.7 kOhm |
Built in Bias Resistor R2 |
4.7 kOhm |
Typical Resistor Ratio R1/R2 |
1 |
SKU |
83370 |