Weight |
0.01 kg
|
Case |
TO92 |
Type |
Transistor Silicon PNP |
Manufacturer |
Microsemi Corporation |
Vbr CBO |
25 |
Vbr CEO |
25 |
Max. PD (W) |
600m |
Derate (Amb) (W/°C) |
3.6m |
hfe |
64 |
Ic Max. (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
500n |
Polarity |
PNP |
@VCE (test) (V) |
1.0 |
Oper. Temp (°C) Max. |
135 |
@Ic (A) |
50m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.6 W |
Maximum Collector-Base Voltage |Vcb| |
25 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
3 V |
Maximum Collector Current |Ic max| |
1 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
20 pF |
Transition Frequency (ft): |
200 MHz |
Forward Current Transfer Ratio (hFE), MIN |
64 |
SKU |
86001 |