Weight |
0.01 kg
|
Manufacturer |
ON Semiconductor |
Case |
TO92 |
Type |
Transistor Silicon NPN |
Vbr CBO |
250 |
Vbr CEO |
250 |
Max. PD (W) |
800m |
Derate (Amb) (W/°C) |
6.6 |
hfe |
50 |
Ic Max. (A) |
500m |
Icbo Max. @Vcb Max. (A) |
10n |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
60M |
@VCE (test) (V) |
20 |
Oper. Temp (°C) Max. |
150 |
@Ic (A) |
25m |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.83 W |
Maximum Collector-Base Voltage |Vcb| |
250 V |
Maximum Collector-Emitter Voltage |Vce| |
250 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.2 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
1.6 pF |
Transition Frequency (ft): |
60 MHz |
Forward Current Transfer Ratio (hFE), MIN |
50 |
SKU |
20213 |