Weight |
0.01 kg
|
Case |
TO220 |
Type |
Transistor Silicon NPN |
Manufacturer |
ST Microelectronics - STM |
Vbr CBO |
60 |
Vbr CEO |
60 |
Max. PD (W) |
75 |
Max. hFE |
150 |
Min hFE |
15 |
Ic Max. (A) |
12 |
@Ic (test) (A) |
4.0 |
Icbo Max. @Vcb Max. (A) |
1.0m |
Polarity |
NPN |
R(sat) (Û) |
250m |
Derate Above 25°C |
598m |
Trans. Freq (Hz) Min. |
3.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
60 W |
Maximum Collector-Base Voltage |Vcb| |
70 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
10 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
10 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
85861 |