Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon NPN |
Manufacturer |
Generic |
Vbr CBO |
100 |
Vbr CEO |
60 |
Max. PD (W) |
100 |
Max. hFE |
70 |
Min hFE |
20 |
Ic Max. (A) |
15 |
@Ic (test) (A) |
4.0 |
Icbo Max. @Vcb Max. (A) |
5.0m |
Polarity |
NPN |
Derate Above 25°C |
666m |
Trans. Freq (Hz) Min. |
1.1M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
4-30 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
100 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
1 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
83591 |