Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Vishay Semiconductor |
Case |
TO126 |
Vbr CBO |
400 |
Vbr CEO |
350 |
Ckts Per Dev. |
1 |
Max. PD (W) |
150 |
Min hFE |
100 |
Ic Max. (A) |
50 |
@Ic (test) (A) |
50 |
Icbo Max. @Vcb Max. (A) |
1.0u |
Polarity |
NPN |
Therm Res. (J-C) |
300m |
Derate Above 25°C |
167m |
VCE(sat) Max. |
2.5 |
Oper. Temp (°C) Max. |
125 |
@VCE (V) |
15 |
Isolated Case (Y/N) |
Yes |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
20 W |
Maximum Collector-Base Voltage |Vcb| |
400 V |
Maximum Collector-Emitter Voltage |Vce| |
350 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
79700 |