Weight |
0.01 kg
|
Type |
Transistor Germanium PNP |
Manufacturer |
Toshiba |
Case |
TO1 |
Vbr CBO |
32 |
Vbr CEO |
32 |
Max. PD (W) |
150m |
Derate (Amb) (W/°C) |
3.3m |
hfe |
90 |
Ic Max. (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
10u |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
2.3M |
@VCE (test) (V) |
0i |
Oper. Temp (°C) Max. |
100 |
@Ic (A) |
300m |
Pinout Equivalence Number |
3-17 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.5 W |
Maximum Collector-Base Voltage |Vcb| |
32 V |
Maximum Collector-Emitter Voltage |Vce| |
12 V |
Maximum Emitter-Base Voltage |Veb| |
10 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
90 °C |
Collector Capacitance (Cc) |
40 pF |
Transition Frequency (ft): |
1 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
16844 |