Weight |
0.01 kg
|
Case |
TO219B |
Type |
Transistor Silicon NPN |
Manufacturer |
RCA - Harris |
Vbr CEO |
45 |
Max. PD (W) |
83 |
Max. hFE |
100 |
Min hFE |
25 |
Ic Max. (A) |
6.0 |
@Ic (test) (A) |
3.0 |
Icbo Max. @Vcb Max. (A) |
2.5m+ |
Polarity |
NPN |
R(sat) (Û) |
333m |
Derate Above 25°C |
666m |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
83 W |
Maximum Collector-Base Voltage |Vcb| |
45 V |
Maximum Collector-Emitter Voltage |Vce| |
45 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
6 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
0.8 MHz |
Forward Current Transfer Ratio (hFE), MIN |
45 |
SKU |
115007 |