Weight |
0.01 kg
|
Case |
TO66 |
Type |
Transistor Silicon NPN |
Manufacturer |
Generic |
Vbr CEO |
60 |
Max. PD (W) |
35 |
Max. hFE |
175 |
Min hFE |
35 |
Ic Max. (A) |
7.0 |
@Ic (test) (A) |
500m |
Icbo Max. @Vcb Max. (A) |
500u |
Polarity |
NPN |
Derate Above 25°C |
200m |
Trans. Freq (Hz) Min. |
15M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
35 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
4 V |
Maximum Collector Current |Ic max| |
7 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
8 MHz |
Forward Current Transfer Ratio (hFE), MIN |
35 |
SKU |
114998 |