| Weight |
0.01 kg
|
| Case |
TO1 |
| Type |
Transistor Germanium NPN |
| Manufacturer |
Hitachi |
| Vbr CBO |
25 |
| Vbr CEO |
25 |
| Max. PD (W) |
150m |
| hfe |
85 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
14u |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
3.5M |
| @VCE (test) (V) |
1.5 |
| Oper. Temp (°C) Max. |
100 |
| @Ic (A) |
50m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.15 W |
| Maximum Collector-Base Voltage |Vcb| |
25 V |
| Maximum Collector-Emitter Voltage |Vce| |
25 V |
| Maximum Emitter-Base Voltage |Veb| |
12 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
2 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
83556 |