Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
NEC |
Case |
TO3 |
Vbr CBO |
100 |
Vbr CEO |
60 |
Max. PD (W) |
60 |
Max. hFE |
80 |
Min hFE |
25 |
Ic Max. (A) |
7.5 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
5.0m |
Polarity |
NPN |
R(sat) (Û) |
400m |
Derate Above 25°C |
400m |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
10 |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
30 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
5 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Forward Current Transfer Ratio (hFE), MIN |
25 |
SKU |
313402 |