Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO3PL |
Vbr CBO |
1.5k |
Vbr CEO |
600 |
Max. PD (W) |
80 |
Min hFE |
8.0 |
Ic Max. (A) |
3.5 |
@Ic (test) (A) |
500m |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Tr Max. (s) |
1.0u |
Derate Above 25°C |
690m |
Trans. Freq (Hz) Min. |
3.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
80 W |
Maximum Collector-Base Voltage |Vcb| |
1500 V |
Maximum Collector-Emitter Voltage |Vce| |
600 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
3.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
95 pF |
Transition Frequency (ft): |
3 MHz |
Forward Current Transfer Ratio (hFE), MIN |
8 |
SKU |
20784 |