Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Hitachi |
Case |
TO220 |
Vbr CBO |
200 |
Vbr CEO |
150 |
Max. PD (W) |
30 |
Max. hFE |
320 |
Min hFE |
60 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
50m |
Icbo Max. @Vcb Max. (A) |
1u |
Polarity |
NPN |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
30 W |
Maximum Collector-Base Voltage |Vcb| |
200 V |
Maximum Collector-Emitter Voltage |Vce| |
150 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
20 pF |
Forward Current Transfer Ratio (hFE), MIN |
60 |
SKU |
20241 |