Weight |
0.01 kg
|
Case |
TO126 |
Type |
Transistor Silicon NPN |
Manufacturer |
Sanyo Semiconductor |
Vbr CBO |
180 |
Vbr CEO |
160 |
Max. PD (W) |
10 |
t(f) Max. (S) |
80n- |
Max. hFE |
400 |
Min hFE |
100 |
Ic Max. (A) |
1.5 |
@Ic (test) (A) |
100m |
Icbo Max. @Vcb Max. (A) |
1.0u |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
120M |
Oper. Temp (°C) Max. |
150 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
180 V |
Maximum Collector Current |Ic max| |
1.5 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
120 MHz |
Forward Current Transfer Ratio (hFE), MIN |
75 |
SKU |
81089 |