Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
MT200 |
Vbr CBO |
160 |
Vbr CEO |
160 |
Max. PD (W) |
150 |
Max. hFE |
240 |
Min hFE |
55 |
Ic Max. (A) |
15 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
50u |
Polarity |
NPN |
Derate Above 25°C |
1.2 |
Trans. Freq (Hz) Min. |
80M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
150 W |
Maximum Collector-Base Voltage |Vcb| |
160 V |
Maximum Collector-Emitter Voltage |Vce| |
160 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
200 pF |
Transition Frequency (ft): |
30 MHz |
Forward Current Transfer Ratio (hFE), MIN |
55 |
SKU |
81013 |