Weight |
0.01 kg
|
Case |
TO220 |
Type |
Transistor Silicon NPN |
Manufacturer |
Mitsubishi |
Vbr CBO |
60 |
Vbr CEO |
20 |
Max. PD (W) |
1.5 |
Max. hFE |
180 |
Min hFE |
10 |
Ic Max. (A) |
6.0 |
@Ic (test) (A) |
100m |
Icbo Max. @Vcb Max. (A) |
500u |
Polarity |
NPN |
Derate Above 25°C |
133m |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
10 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
1.5 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
20 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
6 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
27 MHz |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
83528 |