Weight |
0.01 kg
|
Type |
Transistor Silicon PNP |
Manufacturer |
Microsemi Corporation |
Case |
TO66 |
Vbr CBO |
90 |
Vbr CEO |
85 |
Max. PD (W) |
40 |
Derate (Amb) (W/°C) |
232m |
Max. hFE |
100 |
Min hFE |
20 |
Ic Max. (A) |
6.0 |
@Ic (test) (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
1.0m |
Polarity |
PNP |
R(sat) (Û) |
333m |
Trans. Freq (Hz) Min. |
5.0M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
40 W |
Maximum Collector-Base Voltage |Vcb| |
90 V |
Maximum Collector-Emitter Voltage |Vce| |
80 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
6 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Transition Frequency (ft): |
5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
83126 |