Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Fairchild Semiconductor |
Case |
TO106 |
Vbr CBO |
40 |
Vbr CEO |
15 |
Max. PD (W) |
200m |
C(ob) (F) |
5.0p |
t(on) Delay (S) |
10n |
Derate (Amb) (W/°C) |
2.0m |
t(f) Max. (S) |
15n |
hfe |
3.5 |
Ic Max. (A) |
200m |
Icbo Max. @Vcb Max. (A) |
500n |
Polarity |
NPN |
Tr Max. (s) |
15n |
t(stor) Max. (S) |
20n |
@VCE (test) (V) |
10 |
Oper. Temp (°C) Max. |
125 |
@Ic (A) |
30m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.2 W |
Maximum Collector-Base Voltage |Vcb| |
40 V |
Maximum Collector-Emitter Voltage |Vce| |
10 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.5 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Collector Capacitance (Cc) |
5 pF |
Transition Frequency (ft): |
350 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
115086 |