| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Manufacturer |
Fairchild Semiconductor |
| Case |
TO106 |
| Vbr CBO |
40 |
| Vbr CEO |
15 |
| Max. PD (W) |
200m |
| C(ob) (F) |
5.0p |
| t(on) Delay (S) |
10n |
| Derate (Amb) (W/°C) |
2.0m |
| t(f) Max. (S) |
15n |
| hfe |
3.5 |
| Ic Max. (A) |
200m |
| Icbo Max. @Vcb Max. (A) |
500n |
| Polarity |
NPN |
| Tr Max. (s) |
15n |
| t(stor) Max. (S) |
20n |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
30m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
10 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
5 pF |
| Transition Frequency (ft): |
350 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
115086 |