Weight |
0.01 kg
|
Case |
TO92L |
Type |
Transistor Silicon NPN |
Manufacturer |
General Electric |
Vbr CBO |
18 |
Vbr CEO |
18 |
Max. PD (W) |
200m |
C(ob) (F) |
12p |
Derate (Amb) (W/°C) |
2.6m |
hfe |
35 |
Ic Max. (A) |
500m |
Icbo Max. @Vcb Max. (A) |
500n |
Polarity |
NPN |
@VCE (test) (V) |
10 |
Oper. Temp (°C) Max. |
125 |
@Ic (A) |
2.0m |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.2 W |
Maximum Collector-Base Voltage |Vcb| |
25 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
100 °C |
Collector Capacitance (Cc) |
10 pF |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
86721 |