Weight |
0.01 kg
|
Manufacturer |
National Semiconductor - NSC |
Case |
TO98 |
Type |
Transistor Silicon NPN |
Vbr CBO |
18 |
Vbr CEO |
18 |
Max. PD (W) |
360m |
C(ob) (F) |
12p |
Derate (Amb) (W/°C) |
2.6m |
hfe |
75 |
Ic Max. (A) |
100m |
Icbo Max. @Vcb Max. (A) |
500n |
Polarity |
NPN |
@VCE (test) (V) |
4.5 |
Oper. Temp (°C) Max. |
125 |
@Ic (A) |
2.0m |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.2 W |
Maximum Collector-Base Voltage |Vcb| |
18 V |
Maximum Collector-Emitter Voltage |Vce| |
18 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Collector Capacitance (Cc) |
12 pF |
Forward Current Transfer Ratio (hFE), MIN |
75 |
SKU |
114552 |