Weight |
0.01 kg
|
Case |
TO92 |
Type |
Transistor Silicon NPN |
Manufacturer |
NTE Electronics |
Vbr CBO |
75 |
Vbr CEO |
40 |
Max. PD (W) |
500m |
C(ob) (F) |
8p |
t(on) Delay (S) |
25n |
Derate (Amb) (W/°C) |
2.3m |
t(f) Max. (S) |
60n |
hfe |
50 |
Ic Max. (A) |
800m |
Icbo Max. @Vcb Max. (A) |
10n |
Polarity |
NPN |
Tr Max. (s) |
10n |
t(stor) Max. (S) |
225n |
Trans. Freq (Hz) Min. |
300M |
@VCE (test) (V) |
10 |
Oper. Temp (°C) Max. |
200 |
@Ic (A) |
10m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.5 W |
Maximum Collector-Base Voltage |Vcb| |
75 V |
Maximum Collector-Emitter Voltage |Vce| |
40 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
0.8 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
8 pF |
Transition Frequency (ft): |
300 MHz |
Forward Current Transfer Ratio (hFE), MIN |
100 |
SKU |
16867 |