The website uses cookies to allow us to better understand how the site is used. By continuing to use this site, you consent to this policy. Click to learn more. 
    
RN2401
View detailed images (4)

RN2401

SKU: RN2401
RN2401 SemiConductor - CASE: Standard MAKE: Toshiba
Price: £3.99
+ VAT 20% for UK purchases
£3.99
Qty
+ VAT 20% for UK purchases
  • More pieces shipped in 14 days
Datasheet
RN2401 Datasheet
Product specifications
Case SOT346
Type Transistor Digital Silicon PNP
Manufacturer Toshiba
Min hFE 30
@Ic (test) (A) 10m
Mat. Silicon Logic
Polarity Pre-Biased-PNP
Mat. Struct. PNP
@VCE (V) 5
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code YA
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 285163